AOE6930

Alpha & Omega Semiconductor Inc

AOE6930

模拟与电源

MOSFET 2N-CH 30V 22A/85A 8DFN

在产8-VDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V
基础料号AOE693
配置2 N-Channel (Dual) Asymmetrical
Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V, 65nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1075pF @ 15V, 5560pF @ 15V
制造商Alpha & Omega Semiconductor Inc.
安装类型Surface Mount
Product StatusActive
系列AlphaMOS
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.1V @ 250µA, 1.9V @ 250µA

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C22A (Tc), 85A (Tc)
Power - Max24W, 75W

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-VDFN Exposed Pad
供应商器件封装8-DFN (5x6)

环境

工作温度-55°C ~ 150°C (TJ)