Общие
| Rds On (Max) @ Id, Vgs | 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V |
|---|---|
| Базовый Part Number | SIZF916 |
| Конфигурация | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V, 95nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060pF @ 15V, 4320pF @ 15V |
| Производитель | Vishay Siliconix |
| Тип монтажа | Surface Mount |
| Product Status | Active |
| Серия | TrenchFET® Gen IV |
| Технология | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA, 2.2V @ 250µA |