Общие
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 19A, 10V |
|---|---|
| Базовый Part Number | SIZ710 |
| Конфигурация | 2 N-Channel (Half Bridge) |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 820pF @ 10V |
| Производитель | Vishay Siliconix |
| Тип монтажа | Surface Mount |
| Упаковка | Tape & Reel (TR) Cut Tape (CT) |
| Статус позиции | Last Time Buy |
| Серия | TrenchFET® |
| Технология | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |