Общие
| Rds On (Max) @ Id, Vgs | 0.58mOhm @ 20A, 10V |
|---|---|
| Базовый Part Number | SIRA20 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 186 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9950 pF @ 15 V |
| Производитель | Vishay Siliconix |
| Тип монтажа | Surface Mount |
| Product Status | Active |
| Серия | TrenchFET® Gen IV |
| Технология | MOSFET (Metal Oxide) |
| Vgs (Max) | +16V, -12V |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |