Общие
| Rds On (Max) @ Id, Vgs | 12mOhm @ 25A, 10V |
|---|---|
| Базовый Part Number | TK50E08 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Производитель | Toshiba Semiconductor and Storage |
| Тип монтажа | Through Hole |
| Product Status | Obsolete |
| Технология | MOSFET (Metal Oxide) |
