Toshiba Semiconductor and Storage
TRANS PREBIAS PNP 50V 0.08A CST3
Структурированные электрические, механические и экологические параметры из импортированных атрибутов.
| Базовый Part Number | RN2106 |
|---|---|
| Производитель | Toshiba Semiconductor and Storage |
| Тип монтажа | Surface Mount |
| Product Status | Active |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
|---|---|
| Current - Collector (Ic) (Max) | 80 mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Power - Max | 100 mW |
| Корпус | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | SC-101, SOT-883 |
| Корпус производителя | CST3 |