Toshiba Semiconductor and Storage
TRANS 2NPN PREBIAS 0.2W US6
Структурированные электрические, механические и экологические параметры из импортированных атрибутов.
| Базовый Part Number | RN1961 |
|---|---|
| Производитель | Toshiba Semiconductor and Storage |
| Тип монтажа | Surface Mount |
| Product Status | Obsolete |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 4.7kOhms |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
|---|---|
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Power - Max | 200mW |
| Frequency - Transition | 250MHz |
| Корпус | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Корпус производителя | US6 |