Toshiba Semiconductor and Storage
TRANS 2NPN PREBIAS 0.3W SMV
Структурированные электрические, механические и экологические параметры из импортированных атрибутов.
| Базовый Part Number | RN1503 |
|---|---|
| Производитель | Toshiba Semiconductor and Storage |
| Тип монтажа | Surface Mount |
| Product Status | Active |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Transistor Type | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
|---|---|
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Power - Max | 300mW |
| Frequency - Transition | 250MHz |
| Корпус | Cut Tape (CT) |
|---|---|
| Package / Case | SC-74A, SOT-753 |
| Корпус производителя | SMV |