Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A VESM
Структурированные электрические, механические и экологические параметры из импортированных атрибутов.
| Базовый Part Number | RN1117 |
|---|---|
| Производитель | Toshiba Semiconductor and Storage |
| Тип монтажа | Surface Mount |
| Product Status | Active |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
|---|---|
| Current - Collector (Ic) (Max) | 100 mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Power - Max | 150 mW |
| Frequency - Transition | 250 MHz |
| Корпус | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | SOT-723 |
| Корпус производителя | VESM |