Общие
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1324 pF @ 1000 V |
| Производитель | SMC Diode Solutions |
| Тип монтажа | Through Hole |
| Упаковка | Tube |
| Статус позиции | В производстве |
| Технология | SiCFET (Silicon Carbide) |
| Vgs (Max) | +25V, -10V |
| Vgs(th) (Max) @ Id | 4V @ 10mA |