Общие
| Rds On (Max) @ Id, Vgs | 34mOhm @ 29A, 18V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2320 pF @ 500 V |
| Производитель | Rohm Semiconductor |
| Тип монтажа | Through Hole |
| Product Status | Active |
| Серия | Automotive, AEC-Q101 |
| Технология | SiC (Silicon Carbide Junction Transistor) |
| Vgs (Max) | +21V, -4V |
| Vgs(th) (Max) @ Id | 4.8V @ 15.4mA |