Общие
| Rds On (Max) @ Id, Vgs | 137mOhm @ 7.6A, 18V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 574 pF @ 800 V |
| Производитель | Rohm Semiconductor |
| Тип монтажа | Through Hole |
| Упаковка | Tube |
| Статус позиции | В производстве |
| Технология | SiCFET (Silicon Carbide) |
| Vgs (Max) | +22V, -4V |
| Vgs(th) (Max) @ Id | 5.6V @ 3.81mA |