Общие
| Rds On (Max) @ Id, Vgs | 117mOhm @ 10A, 18V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 800 V |
| Производитель | Rohm Semiconductor |
| Тип монтажа | Through Hole |
| Упаковка | Tube |
| Статус позиции | Устаревший |
| Технология | SiCFET (Silicon Carbide) |
| Vgs (Max) | +22V, -6V |
| Vgs(th) (Max) @ Id | 4V @ 4.4mA |