Общие
| Rds On (Max) @ Id, Vgs | 185mOhm @ 11.3A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1650 pF @ 25 V |
| Производитель | Rohm Semiconductor |
| Тип монтажа | Through Hole |
| Упаковка | Tube |
| Статус позиции | В производстве |
| Технология | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 750µA |