Общие
| Rds On (Max) @ Id, Vgs | 193mOhm @ 3A, 10V, 273mOhm @ 3A, 10V |
|---|---|
| Конфигурация | N and P-Channel |
| FET Feature | Standard |
| Gate Charge (Qg) (Max) @ Vgs | 2.9nC @ 10V, 19.7nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 90pF @ 50V, 590pF @ 50V |
| Производитель | Rohm Semiconductor |
| Тип монтажа | Surface Mount |
| Product Status | Active |
| Технология | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |