Общие
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 10 V |
| Производитель | Renesas Electronics America Inc |
| Тип монтажа | Through Hole |
| Product Status | Obsolete |
| Технология | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |