Структурированные электрические, механические и экологические параметры из импортированных атрибутов.
| Gate Charge | 100 nC |
|---|---|
| IGBT Type | NPT |
| Тип входа | Standard |
| Производитель | onsemi |
| Тип монтажа | Through Hole |
| Product Status | Not For New Designs |
| Reverse Recovery Time (trr) | 70 ns |
| Switching Energy | 950µJ (on), 1.3mJ (off) |
| Td (on/off) @ 25°C | 23ns/180ns |
| Test Condition | 960V, 11A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 11A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
|---|---|
| Current - Collector (Ic) (Max) | 43 A |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 298 W |
| Корпус | Tube |
|---|---|
| Package / Case | TO-247-3 |
| Корпус производителя | TO-247-3 |
| Рабочая температура | -55°C~150°C(TJ) |
|---|