Структурированные электрические, механические и экологические параметры из импортированных атрибутов.
| Базовый Part Number | PDTC115 |
|---|---|
| Производитель | NXP USA Inc. |
| Тип монтажа | Through Hole |
| Product Status | Obsolete |
| Resistor - Base (R1) | 100 kOhms |
| Resistor - Emitter Base (R2) | 100 kOhms |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
|---|---|
| Current - Collector (Ic) (Max) | 20 mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Power - Max | 500 mW |
| Корпус | Tape & Box (TB) |
|---|---|
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Корпус производителя | TO-92-3 |