Общие
| Rds On (Max) @ Id, Vgs | 11.2mOhm @ 12A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 33.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
| Производитель | NXP Semiconductors |
| Тип монтажа | Surface Mount |
| Product Status | Active |
| Серия | Automotive, AEC-Q101, TrenchMOS™ |
| Технология | MOSFET (Metal Oxide) |
| Vgs (Max) | ±16V |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |