Общие
| Rds On (Max) @ Id, Vgs | 120mOhm @ 10A, 5V |
|---|---|
| FET Feature | Logic Level Gate, 4V Drive |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V |
| Производитель | NTE Electronics, Inc |
| Тип монтажа | Through Hole |
| Product Status | Active |
| Технология | MOSFET (Metal Oxide) |
| Vgs (Max) | ±15V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |