Общие
| Rds On (Max) @ Id, Vgs | 7.5Ohm @ 100mA, 10V |
|---|---|
| Конфигурация | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 0.35nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 36pF @ 25V |
| Производитель | Nexperia USA Inc. |
| Тип монтажа | Surface Mount |
| Product Status | Obsolete |
| Серия | TrenchMOS™ |
| Технология | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |