Общие
| Rds On (Max) @ Id, Vgs | 430mOhm @ 500mA, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 480 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 25 V |
| Производитель | Microsemi Corporation |
| Тип монтажа | Chassis Mount |
| Product Status | Obsolete |
| Технология | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |