Общие
| Rds On (Max) @ Id, Vgs | 31mOhm @ 40A, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 232 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3020 pF @ 1000 V |
| Производитель | Microchip Technology |
| Тип монтажа | Chassis Mount |
| Product Status | Active |
| Технология | SiCFET (Silicon Carbide) |
| Vgs (Max) | +25V, -10V |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |