Общие
| Rds On (Max) @ Id, Vgs | 44mOhm @ 30A, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 99 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2010 pF @ 700 V |
| Производитель | Microchip Technology |
| Тип монтажа | Through Hole |
| Упаковка | Tube |
| Статус позиции | В производстве |
| Технология | SiCFET (Silicon Carbide) |
| Vgs (Max) | +25V, -10V |
| Vgs(th) (Max) @ Id | 2.7V @ 2mA |