Общие
| Производитель | Microchip Technology |
|---|---|
| Тип монтажа | Through Hole |
| Product Status | Active |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |

Структурированные электрические, механические и экологические параметры из импортированных атрибутов.
| Производитель | Microchip Technology |
|---|---|
| Тип монтажа | Through Hole |
| Product Status | Active |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
|---|---|
| Current - Collector (Ic) (Max) | 1 A |
| Current - Collector Cutoff (Max) | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Power - Max | 800 mW |
| Корпус | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Корпус производителя | TO-39 (TO-205AD) |
| Grade | Military |
|---|---|
| Рабочая температура | -55°C ~ 200°C (TJ) |
| Qualification | MIL-PRF-19500/368 |