Общие
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20.5A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4360 pF @ 25 V |
| Производитель | Microchip Technology |
| Тип монтажа | Chassis Mount |
| Product Status | Obsolete |
| Серия | POWER MOS 7® |
| Технология | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |