Общие
| Rds On (Max) @ Id, Vgs | 19mOhm @ 500mA, 10V |
|---|---|
| Базовый Part Number | APT10M19 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6120 pF @ 25 V |
| Производитель | Microchip Technology |
| Тип монтажа | Through Hole |
| Product Status | Active |
| Серия | POWER MOS V® |
| Технология | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |