Общие
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 50A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3720 pF @ 25 V |
| Производитель | International Rectifier |
| Тип монтажа | Surface Mount, Wettable Flank |
| Product Status | Active |
| Серия | HEXFET® |
| Технология | MOSFET (Metal Oxide) |
| Vgs (Max) | ±16V |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA |