IRGSL4B60 - DISCRETE IGBT WITH A
Структурированные электрические, механические и экологические параметры из импортированных атрибутов.
| Gate Charge | 12 nC |
|---|---|
| IGBT Type | NPT |
| Тип входа | Standard |
| Производитель | International Rectifier |
| Тип монтажа | Through Hole |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 93 ns |
| Switching Energy | 73µJ (on), 47µJ (off) |
| Td (on/off) @ 25°C | 22ns/100ns |
| Test Condition | 400V, 4A, 100Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 4A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
|---|---|
| Current - Collector (Ic) (Max) | 11 A |
| Current - Collector Pulsed (Icm) | 22 A |
| Power - Max | 63 W |
| Корпус | Bulk |
|---|---|
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Корпус производителя | TO-262 |
| Рабочая температура | -55°C~175°C(TJ) |
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