Общие
| Rds On (Max) @ Id, Vgs | 9mOhm @ 100A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 390 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6790 pF @ 25 V |
| Производитель | International Rectifier |
| Тип монтажа | Through Hole |
| Product Status | Active |
| Серия | HEXFET® |
| Технология | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |