Общие
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 100A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 324 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10820 pF @ 25 V |
| Производитель | Infineon Technologies |
| Тип монтажа | Through Hole |
| Product Status | Obsolete |
| Серия | HEXFET®, StrongIRFET™ |
| Технология | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |