Общие
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 20 V |
| Производитель | Infineon Technologies |
| Тип монтажа | Surface Mount |
| Product Status | Obsolete |
| Серия | HEXFET® |
| Технология | MOSFET (Metal Oxide) |