Общие
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.9A, 4.5V |
|---|---|
| Базовый Part Number | IRF58 |
| Конфигурация | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 9.6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 16V |
| Производитель | Infineon Technologies |
| Тип монтажа | Surface Mount |
| Product Status | Obsolete |
| Серия | HEXFET® |
| Технология | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |