Общие
| Rds On (Max) @ Id, Vgs | 5.3mOhm @ 300A, 18V |
|---|---|
| Конфигурация | 2 N-Channel |
| FET Feature | Silicon Carbide (SiC) |
| Gate Charge (Qg) (Max) @ Vgs | 1170nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 36100pF @ 1.2kV |
| Производитель | Infineon Technologies |
| Тип монтажа | Chassis Mount |
| Product Status | Active |
| Серия | C, CoolSiC™ |
| Технология | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 5.15V @ 168mA |