Общие
| Rds On (Max) @ Id, Vgs | 55mOhm @ 5.1A, 4.5V |
|---|---|
| Конфигурация | N and P-Channel Complementary |
| FET Feature | Logic Level Gate, 2.5V Drive |
| Gate Charge (Qg) (Max) @ Vgs | 2.8nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 419pF @ 10V |
| Производитель | Infineon Technologies |
| Тип монтажа | Surface Mount |
| Product Status | Active |
| Серия | OptiMOS™ |
| Технология | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.4V @ 110µA |