Общие
| Rds On (Max) @ Id, Vgs | 110mOhm @ 3.1A, 10V |
|---|---|
| Базовый Part Number | BSO615 |
| Конфигурация | N and P-Channel |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 22.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 25V |
| Производитель | Infineon Technologies |
| Тип монтажа | Surface Mount |
| Product Status | Obsolete |
| Серия | SIPMOS® |
| Технология | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 20µA |