Общие
| Rds On (Max) @ Id, Vgs | 46mOhm @ 25A, 18V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2130 pF @ 800 V |
| Производитель | Infineon Technologies |
| Тип монтажа | Through Hole |
| Product Status | Active |
| Серия | CoolSiC™ |
| Технология | SiCFET (Silicon Carbide) |
| Vgs (Max) | +23V, -7V |
| Vgs(th) (Max) @ Id | 5.7V @ 10mA |