Общие
| Rds On (Max) @ Id, Vgs | 25mOhm @ 42A, 5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1650 pF @ 25 V |
| Производитель | Harris Corporation |
| Тип монтажа | Through Hole |
| Product Status | Active |
| Технология | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |