Общие
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 30A, 10V |
|---|---|
| Конфигурация | 2 N-Channel |
| FET Feature | Standard |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1276pF @ 20V |
| Производитель | Goford Semiconductor |
| Тип монтажа | Surface Mount |
| Product Status | Active |
| Технология | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |