Общие
| Rds On (Max) @ Id, Vgs | 11mOhm @ 16A, 10V |
|---|---|
| Базовый Part Number | G33N |
| Конфигурация | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 837pF @ 15V |
| Производитель | Goford Semiconductor |
| Тип монтажа | Surface Mount |
| Product Status | Active |
| Серия | TrenchFET® |
| Технология | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |