Общие
| Rds On (Max) @ Id, Vgs | 20mOhm @ 6A, 10V |
|---|---|
| Базовый Part Number | G180 |
| Конфигурация | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Gate Charge (Qg) (Max) @ Vgs | 58nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2330pF @ 30V |
| Производитель | Goford Semiconductor |
| Тип монтажа | Surface Mount |
| Product Status | Active |
| Серия | TrenchFET® |
| Технология | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |