Общие
| Rds On (Max) @ Id, Vgs | 35mOhm @ 6A, 10V, 45mOhm @ 5A, 10V |
|---|---|
| Базовый Part Number | G06N |
| Конфигурация | N and P-Channel |
| FET Feature | Standard |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V, 25nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 30V, 2610pF @ 30V |
| Производитель | Goford Semiconductor |
| Тип монтажа | Surface Mount |
| Product Status | Active |
| Серия | TrenchFET® |
| Технология | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA, 3.5V @ 250µA |