Общие
| Rds On (Max) @ Id, Vgs | 50mOhm @ 40A, 20V |
|---|---|
| FET Feature | Standard |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 340 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7301 pF @ 1000 V |
| Производитель | GeneSiC Semiconductor |
| Тип монтажа | Through Hole |
| Product Status | Active |
| Серия | G2R™ |
| Технология | SiCFET (Silicon Carbide) |
| Vgs (Max) | +25V, -10V |
| Vgs(th) (Max) @ Id | 3.5V @ 10mA (Typ) |