Общие
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 475A, 20V |
|---|---|
| Базовый Part Number | GE12160 |
| Конфигурация | 2 N-Channel (Half Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Gate Charge (Qg) (Max) @ Vgs | 3744nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 90000pF @ 600V |
| Производитель | GE Aerospace |
| Тип монтажа | Chassis Mount |
| Product Status | Active |
| Серия | SiC Power |
| Технология | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4.5V @ 480mA |