Общие
| FET Type | N-Channel |
|---|---|
| Gate Charge (Qg) (Max) @ Vgs | 3.1 nC @ 6 V |
| Input Capacitance (Ciss) (Max) @ Vds | 90 pF @ 700 V |
| Производитель | GaNPower |
| Тип монтажа | Surface Mount |
| Product Status | Active |
| Технология | GaNFET (Gallium Nitride) |
| Vgs (Max) | +7.5V, -12V |
| Vgs(th) (Max) @ Id | 1.7V @ 3.5mA |