Общие
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4A, 5V |
|---|---|
| Базовый Part Number | EPC211 |
| Конфигурация | 2 N-Channel (Dual) Common Source |
| Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 60V |
| Производитель | EPC |
| Product Status | Active |
| Серия | eGaN® |
| Технология | GaNFET (Gallium Nitride) |
| Vgs(th) (Max) @ Id | 2.5V @ 700µA |