Общие
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V |
|---|---|
| Базовый Part Number | EPC210 |
| Конфигурация | 2 N-Channel (Half Bridge) |
| Gate Charge (Qg) (Max) @ Vgs | 2.7nC @ 5V, 12nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 30V, 1200pF @ 30V |
| Производитель | EPC |
| Тип монтажа | Surface Mount |
| Product Status | Active |
| Серия | eGaN® |
| Технология | GaNFET (Gallium Nitride) |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA, 2.5V @ 12mA |