Общие
| Rds On (Max) @ Id, Vgs | 3.3Ohm @ 50mA, 5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.044 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8.4 pF @ 50 V |
| Производитель | EPC |
| Тип монтажа | Surface Mount |
| Product Status | Active |
| Серия | eGaN® |
| Технология | GaNFET (Gallium Nitride) |
| Vgs (Max) | +6V, -4V |
| Vgs(th) (Max) @ Id | 2.5V @ 20µA |