Общие
| Rds On (Max) @ Id, Vgs | 4mOhm @ 33A, 5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 20 V |
| Производитель | EPC |
| Тип монтажа | Surface Mount |
| Product Status | Discontinued at |
| Серия | eGaN® |
| Технология | GaNFET (Gallium Nitride) |
| Vgs (Max) | +6V, -5V |
| Vgs(th) (Max) @ Id | 2.5V @ 9mA |