Общие
| Rds On (Max) @ Id, Vgs | 900mOhm @ 420mA, 10V |
|---|---|
| Конфигурация | 2 P-Channel (Dual) |
| FET Feature | Standard |
| Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 19pF @ 15V |
| Производитель | Diodes Incorporated |
| Тип монтажа | Surface Mount |
| Product Status | Active |
| Технология | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
